



@article {2062,
	title = {Disorder induced transitions in resonantly driven Floquet Topological Insulators},
	journal = {Physical Review B},
	volume = {96},
	year = {2017},
	month = {2017/08/16},
	pages = {054207},
	abstract = {<p><span style="font-family: \&quot;Lucida Grande\&quot;, helvetica, arial, verdana, sans-serif; font-size: 14.4px;">We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction band. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasi-energy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet Topological Anderson Insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.</span></p>},
	doi = {10.1103/PhysRevB.96.054207},
	url = {https://arxiv.org/abs/1702.02956},
	author = {Paraj Titum and Netanel H. Lindner and Gil Refael}
}
