@article {2147, title = {High-fidelity quantum gates in Si/SiGe double quantum dots}, journal = {Physical Review B}, volume = {97}, year = {2018}, month = {2018/02/15}, pages = {085421}, abstract = {

Motivated by recent experiments of Zajac\ et\ al.\ [Science359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.

}, doi = {10.1103/PhysRevB.97.085421}, url = {https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.085421}, author = {Maximilian Russ and D. M. Zajac and A. J. Sigillito and F. Borjans and J. M. Taylor and J. R. Petta and Guido Burkard} }