01439nas a2200205 4500008004100000245005100041210005100092260001500143300001200158490000800170520087500178100001801053700002201071700001301093700001601106700001901122700001901141700001801160856005501178 2018 eng d00aResonantly driven CNOT gate for electron spins0 aResonantly driven CNOT gate for electron spins c2018/01/26 a439-4420 v3593 a
Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon.
1 aZajac, D., M.1 aSigillito, A., J.1 aRuss, M.1 aBorjans, F.1 aTaylor, J., M.1 aBurkard, Guido1 aPetta, J., R. uhttp://science.sciencemag.org/content/359/6374/439