



01580nas a2200181   4500008004100000245005200041210005200093260001500145300001100160490000700171520107600178100002301254700002101277700001901298700002001317700002401337856003701361       2017                        eng d00aValley Blockade in a Silicon Double Quantum Dot0 aValley Blockade in a Silicon Double Quantum Dot  c2017/11/13  a2053020 v963 a<p><span style="color: rgb(0, 0, 0); font-family: &quot;Lucida Grande&quot;, helvetica, arial, verdana, sans-serif; font-size: 14.4px;">Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots&#39; carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of the bias triangles at the two bias polarities. Asymmetries of this nature are associated with blocking of tunneling events due to the occupation of a metastable state. Several features of our data lead us to conclude that the states involved are not simple spin states. Rather, we develop a model based on selective filling of valley states in the DQD that is consistent with all of the qualitative features of our data.</span></p>1 aPerron, Justin, K.1 aGullans, Michael1 aTaylor, J., M.1 aStewart, M., D.1 aZimmerman, Neil, M.  uhttps://arxiv.org/abs/1607.06107