01653nas a2200169 4500008004100000245007700041210006900118260001500187300001100202490000700213520111300220100002301333700001701356700002501373700001601398856006901414 2018 eng d00aAbsence of Thermalization in Finite Isolated Interacting Floquet Systems0 aAbsence of Thermalization in Finite Isolated Interacting Floquet c2018/01/29 a0143110 v973 a

Conventional wisdom suggests that the long time behavior of isolated interacting periodically driven (Floquet) systems is a featureless maximal entropy state characterized by an infinite temperature. Efforts to thwart this uninteresting fixed point include adding sufficient disorder to realize a Floquet many-body localized phase or working in a narrow region of drive frequencies to achieve glassy non-thermal behavior at long time. Here we show that in clean systems the Floquet eigenstates can exhibit non-thermal behavior due to finite system size. We consider a one-dimensional system of spinless fermions with nearest-neighbor interactions where the interaction term is driven. Interestingly, even with no static component of the interaction, the quasienergy spectrum contains gaps and a significant fraction of the Floquet eigenstates, at all quasienergies, have non-thermal average doublon densities. We show that this non-thermal behavior arises due to emergent integrability at large interaction strength and discuss how the integrability breaks down with power-law behavior in system size.

1 aSeetharam, Karthik1 aTitum, Paraj1 aKolodrubetz, Michael1 aRefael, Gil uhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.01431101465nas a2200157 4500008004100000245008500041210006900126260001500195300001100210490000700221520098400228100001701212700002501229700001601254856003701270 2017 eng d00aDisorder induced transitions in resonantly driven Floquet Topological Insulators0 aDisorder induced transitions in resonantly driven Floquet Topolo c2017/08/16 a0542070 v963 a

We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction band. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasi-energy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet Topological Anderson Insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.

1 aTitum, Paraj1 aLindner, Netanel, H.1 aRefael, Gil uhttps://arxiv.org/abs/1702.02956