02685nas a2200205 4500008004100000245006300041210006100104260001500165300001100180490000700191520207900198100002102277700001802298700002202316700001602338700001902354700001802373700001902391856006902410 2018 eng d00aHigh-fidelity quantum gates in Si/SiGe double quantum dots0 aHighfidelity quantum gates in SiSiGe double quantum dots c2018/02/15 a0854210 v973 a

Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.

1 aRuss, Maximilian1 aZajac, D., M.1 aSigillito, A., J.1 aBorjans, F.1 aTaylor, J., M.1 aPetta, J., R.1 aBurkard, Guido uhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.08542101439nas a2200205 4500008004100000245005100041210005100092260001500143300001200158490000800170520087500178100001801053700002201071700001301093700001601106700001901122700001901141700001801160856005501178 2018 eng d00aResonantly driven CNOT gate for electron spins0 aResonantly driven CNOT gate for electron spins c2018/01/26 a439-4420 v3593 a

Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon.

1 aZajac, D., M.1 aSigillito, A., J.1 aRuss, M.1 aBorjans, F.1 aTaylor, J., M.1 aBurkard, Guido1 aPetta, J., R. uhttp://science.sciencemag.org/content/359/6374/439