



01220nas a2200157   4500008004100000245008300041210006900124260001400193300001100207490000800218520072400226100001800950700002200968700001500990856005701005       2022                        eng d00aIsolation and manipulation of a single-donor detector in a silicon quantum dot0 aIsolation and manipulation of a singledonor detector in a silico  c9/27/2022  a1254230 v1063 a<p>We demonstrate the isolation and electrostatic control of a single phosphorus donor in a silicon quantum dot by making use of source-drain bias during cooldown and biases applied to capacitively coupled gates. Characterization of the device at low temperatures and in magnetic fields shows single donors can be electrostatically isolated near one of the quantum dot&#39;s tunnel barriers with either single or double occupancy. This model is well supported by capacitance-based simulations. The ability to use the&nbsp;D&nbsp;0&nbsp;state of such isolated donors as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semiconnected double quantum dot.</p>1 aLasek, A., A.1 aBarnes, C., H. W.1 aFerrus, T.  uhttps://link.aps.org/doi/10.1103/PhysRevB.106.125423